Ismo (OH2FTG) recently introduced me to a bunch of Tokmas RF parts. Out of these, the Tokmas CID10N65F GaN FET stood out. It seems to have a lot of potential (for HF + 6m) at a very low price point.

This RF MOSFET part can be purchased from LCSC.

It seems Tokmas CID10N65F has the potential to completely replace the RD16HHF1 part from Mitsubishi Electric!

Datasheet

Datasheet excerpt:

New hotness

The full datasheet is available here.

Comparison

This device should be quite competitive even when compared to the RD15HVF1-501 MOSFET!

Old dog

I am planning to build a couple of projects around this part soon - stay tuned for more!

Updates

The copper substrate is connected to the source, so it can be mounted directly on the heat sink without an insulating thermal pad. The TO-220F package has an insulating plastic body on all sides. Using a "sharpening bar," the plastic can be scraped away from below to expose the copper substrate (via the CQHAM forum). This modification significantly improves heat dissipation (about 30 degrees).

New hotness modification

Here is the 3D render for a PCB I made for testing this part:

GaN FET Test PCB

Updates (22-April-2025):

With Tokmas CID10N65F, 14V @ drain, and 5V to the driver, we get ~8W on 28 MHz and 6W at 50 MHz. It seems we have a winner. The DUT also stays much cooler than the "famous" IRF510. With 20V @ drain, it easily reaches ~12W at 50 MHz.

Picture:

Demo picture